rs, and other switching applications. Features Ordering Information High density cell design for low on-resistance Voltage control small signal switch Rugged and reliable High saturation current capability Provide in TO-92 package Part No. Packing Package TSM2N7000CT A3 Ammo pack TO-92 TSM2N7000CT B0 Bulk pack Block Diagram Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Drain-Gate Voltage VDGR 60 V Gate-Source Voltage --- Continuous VGS 20 V VGSM 40 ID 200 mA IDM 500 mA PD 350 mW 2.8 mW/ oC --- Pulsed Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation o Ta = 25 C o Ta > 25 C Operating Junction Temperature +150 o C TJ, TSTG - 55 to +150 o C Symbol Limit TL 10 TJ Operating Junction and Storage Temperature Range Thermal Performance Parameter Lead Temperature (1/8" from case) Junction to Ambient Thermal Resistance TSM2N7000 Rja 1-3 357 2003/12 rev. A Unit S o C/W Electrical Characteristics Tj = 25
efinition: 1. Gate 2. Source 3. Drain 60 5 @ VGS = 10V Features ID (mA) 500 Block Diagram Fast Switching Speed Low Input and Output Leakage Application Direct Logic-Level Interface: TTL/CMOS Solid-State Relays Ordering Information Part No. Package Packing TSM2N7000CT B0 TSM2N7000CT A3 TO-92 TO-92 1Kpcs / Bulk 2Kpcs / Ammo N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V ID 200 mA IDM 500 mA IS 500 mA Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) a,b o Maximum Power Dissipation Ta = 25 C PD o Ta = 75 C Operating Junction Temperature 280 mW +150 o TJ, TSTG -55 to +150 o Symbol Limit TL 10 TJ Operating Junction and Storage Temperature Range 350 C C Thermal Performance Parameter Lead Temperature (1/8" from case) Junction to Ambient Thermal Resistance (PCB mounted) RJA 357 Unit S o C/W Notes: a. Pulse width limited by the Maximum ju
psyon)(Q) Ib (mA) 3. Drain 60 5 @ Ves = 10V 75 123 Features Block Diagram e Fast Switching Speed D e Low Input and Output Leakage Application e Direct Logic-Level Interface: TTL/CMOS a o e Solid-State Relays Ordering Information Part No. Package Packing S TSM2N7000CT BO TO-92 1Kpcs / Bulk N-Channel MOSFET TSM2N7000CT A3 TO-92 2Kpcs / Ammo Absolute Maximum Rating (Ta = 25C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Vos 60 V Gate-Source Voltage Ves +20 V Continuous Drain Current Ib 200 mA Pulsed Drain Current lom 500 mA Continuous Source Current (Diode Conduction)* Is 500 mA Ta = 25C 350 Maximum Power Dissipation Pp mW Ta = 75C 280 Operating Junction Temperature Ty +150 C Operating Junction and Storage Temperature Range Ty, Tste -55 to +150 C Thermal Performance Parameter Symbol Limit Unit Lead Temperature (1/8 from case) TL 10 Ss Junction to Ambient Thermal Resistance (PCB mounted) RO, 357 C/W Notes: a. Pulse width limited by the Maximum junction temperat
psyon)(Q) Ib (mA) 3. Drain 60 5 @ Ves = 10V 75 123 Features Block Diagram e Fast Switching Speed D e Low Input and Output Leakage Application e Direct Logic-Level Interface: TTL/CMOS a o e Solid-State Relays Ordering Information Part No. Package Packing S TSM2N7000CT BO TO-92 1Kpcs / Bulk N-Channel MOSFET TSM2N7000CT A3 TO-92 2Kpcs / Ammo Absolute Maximum Rating (Ta = 25C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Vos 60 V Gate-Source Voltage Ves +20 V Continuous Drain Current Ib 200 mA Pulsed Drain Current lom 500 mA Continuous Source Current (Diode Conduction)* Is 500 mA Ta = 25C 350 Maximum Power Dissipation Pp mW Ta = 75C 280 Operating Junction Temperature Ty +150 C Operating Junction and Storage Temperature Range Ty, Tste -55 to +150 C Thermal Performance Parameter Symbol Limit Unit Lead Temperature (1/8 from case) TL 10 Ss Junction to Ambient Thermal Resistance (PCB mounted) RO, 357 C/W Notes: a. Pulse width limited by the Maximum junction temperat