Power MOSFETs 12A and 14A, 60V~100V fps(on) = 0.18Q and 0.25Q Features: @ Single pulse avalanche energy rated @ SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics @ High input impedance The IRF530R, IRF531AR, IRF532R and IRF533R are ad- vanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel en- hancement-mode silicon-gate power field-effect transis- tors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and driv- ers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRF-types are supplied in the JEDEC TO-220AE plastic package. Absolute Maximum Ratings IRF530R, IRF531R, IRF532R, IRF533R N-CHANNEL ENHANCEMENT MODE Oo 920S-42658 TERMINAL DIAGRAM TERMINAL DESIGNATION ~ SOUR
-Dissipation Limited O oe * Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Description The IRF530, IRF531, IRF532, and IRF533 are n-channel enhancement-mode silicon-gate power field-effect transis- tors. IRF530R, IRF531R, IRF532R and IRF533R types are advanced power MOSFETs designed, tested, and guaranteed Terminal Diagram N-CHANNEL ENHANCEMENT MODE to withstand a specified level of energy in the breakdown D avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high G speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRF types are supplied in the JEDEC TO-220AB plastic s package. Absolute Maximum Ratings (Tc = +25C), Unless Otherwise Specified IRF530 IRF531 IRF532 IRF533 IRFS30R IRF531R IRF532R IRF533R UNITS Drain-Source Vol
eae * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance Description The IRF530, IRFSS1, IRF532, and IRFS33 are n-channel Terminal Diagram enhancement-mode silicon-gate power field-effect transis- tors. IRFS30R, IRF531R, IRF532R and IRF533R types are N-CHANNEL ENHANCEMENT MODE advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown D avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high G speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRF types are supplied in the JEDEC TO-220AB plastic $s package. Absolute Maximum Ratings (Tc = +25C), Unless Otherwise Specified IRF530 IRF531 IRF32 IRFS33 IRF530R IRF531R IRF532R IRF533R UNITS Drain-Source Voltage (1)... 2...
ation Limited L. oO _= OeE. Nanosecond Switching Speeds Linear Transfer Characteristics High Input impedance Description The IRF530, IRF531, IRF532, and IRF533 are n-channel enhancement-mode silicon-gate power field-effect transis- tors. IRF530R, IRF531R, IRF532R and IRF533R types are advanced power MOSFETs designed, tested, and guaranteed Terminal Diagram N-CHANNEL ENHANCEMENT MODE to withstand a specified level of energy in the breakdown o avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high G speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRF types are supplied in the JEDEC TO-220AB plastic s package. Absolute Maximum Ratings (Tc = +25C), Unless Otherwise Specified IRF530 IRFS531 IRF532 IRF533 IRF530R IRF531R IRF532R IRF533R UNITS Drain-Source Vo
eae * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance Description The IRF530, IRFSS1, IRF532, and IRFS33 are n-channel Terminal Diagram enhancement-mode silicon-gate power field-effect transis- tors. IRFS30R, IRF531R, IRF532R and IRF533R types are N-CHANNEL ENHANCEMENT MODE advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown D avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high G speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRF types are supplied in the JEDEC TO-220AB plastic $s package. Absolute Maximum Ratings (Tc = +25C), Unless Otherwise Specified IRF530 IRF531 IRF32 IRFS33 IRF530R IRF531R IRF532R IRF533R UNITS Drain-Source Voltage (1)... 2...
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