MJE13005HL MJE LOW VOLTAGE SERIES TRANSISTORS FEATURES APPLICATION: HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING SUITABLE FOR 110V CIRCUIT MODE WIDE SOA FLUORESCENT LAMP ELECTRONIC BALLAST Absolute Maximum Ratings Tc=25C TO-220 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 200 V Emitter- Base Voltage VEBO 9 V Collector Current IC 5 A Total Power Dissipation PC 75 W Junction Temperature Tj 150 C Storage Temperature Tstg -65-150 C Electronic Characteristics Tc=25C CHARACTERISTICS SYMBOL TEST CONDITION Collector-Base Cutoff Current ICBO VCB=400V 100 A Collector-Emitter Cutoff Current ICEO VCE=200V,IB=0 250 A Collector-Emitter Voltage VCEO IC=10mA,IB=0 200 V Emitter -Base Voltage VEBO IE=10mA,IC=0 9 V Collector-Emitter Saturation Voltage Vces Base-Emitter Saturation Voltage Vbes DC Current Gain hFE Si semiconductors 2004.10 MIN MAX IC=0.5A,IB=0.1A 0.6 IC=2.0A,IB=0.4A 1.0 IC=4.0A,IB=1.0A 2.0 IC=2.0A,IB=0.4A 2.0 VCE=5V,IC=10mA 10 VCE=5V,IC=1.0A 15 UNIT V V